6inch 1.0mmAluminum Nitride AlN Ceramic Substrate, High Thermal Conductivity, Customized AlN Ceramic,6inch ceramic substrates
AlN Introduce
The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic),
low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and
other fields.Special spec products can be produced upon requests.
PRODUCT PERFORMANCE
High thermal conductivity, high flexural strength, high temperature,Good electrical insulation
Low dielectric constant and loss
APPLICATIONS
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RF/Microwave Components
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Power Modulus
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Power Transformers
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High Power LED package
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Laser Diode Sub-mounts
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LED Chip Sub-mount
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Microelectronic Packages
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Transistors
Our cooperating factory can applied the casting-tape process for the manufacturing of alumina substrate. With good thermal conductivity, insulation, thermal shock resistance, well resistance and anti-acid and
alkali etc., our ceramic substrates can be used in thick-film hybrid integrated circuits (HIC), LED ceramic radiating base, power module, semiconductor devices and other fields.
AlN Feature ＆ Advantagement
| - Product Name: | Aluminium Nitride / AIN Ceramic Substrate |
| - Material: | Aluminum Nitride / AlN |
| - Typical Characteristics: | 1. Very High Thermal Conductivity 2. Good Electrical Insulation 3. Corrosion Resistance 4. Good Flatness |
| - Typical Applications: | 1. Power Electronic Device 2. High Brightness LED 3. Communication Device |
Material Properties
| Properties / Material | 96% Alumina | AlN |
| Density (g/cm3) | 3.6 | 3.3 |
| Color | White | Grey |
| Dielectric Strength (KV/mm) | ≥17 | ≥17 |
| Dielectric Constant (1MHz) | 10.6 | 8.9 |
| Volume Resistivity (@20°C, Ω.cm) | ≥1014 | ≥1014 |
| Thermal Conductivity (@20°C, W/mk) | ≥24 | ≥175 |
| Thermal Expansion Coefficient (10-6/°C) | 6.5-8.0 | 4.8 |
| Flexural Strength (MPa) | ≥350 | ≥450
|
Regular Size
| Thickness(mm) | lengthx width ( mm) |
| 0.385 | 2″* 2″ 50.8mm*50.8mm | 3″* 3″ 76.2mm*76.2mm | 4″* 4″ 101.6mm*101.6mm | 4.5″* 4.5″ 114.3mm*114.3mm |
| 0.5 |
| 0.635 |
| 1.0 |
| | diameter(mm) |
| 1.0 | Φ16 Φ19 | Φ20 Φ26 | Φ30 Φ35 | Φ40 Φ45 | Φ50 Φ52 | Φ60 | Φ75 | Φ80 |
| 1.2 |
| 1.5 |
| 2.0 |
| 2.5 |
| | | | | | | | | | | | |
| Diameter (mm) | Thickness (mm) |
| 2'' (50.8mm ) OF 16mm | 3'' (76.2mm) OF22mm | 4'' (100mm) OF 30mm | 5“ (125mm) OF 42.5mm | 6" (150mm) OF 47.5mm | 0.385 |
| 0.5 |
| 0.65 |
| 1.0 |
Polishing Service
Our AlN substrate can be polished(single and double polish) by the advanced machine which imported
from abroad. Ceramic substrate surface roughness can reach to 1nm without porous after being polished.
It is perfectly suitable for the device application of small spec, high precision , wiring density and good stability.
Package ＆ Delivery
Product Tags:
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6 Inch 1.0mm Ceramic Substrate , Alumina Ceramic Plate For Semiconductor Processing Images
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